1 CAS325M12HM2 1.2kv, 3.6 m? all-silicon carbide high performance, half-bridge module c2m mosfet and z-rec tm diode datashe e t: cas325m12h m2, re v . a, 12-2016 features ? ultra low loss, low (5 nh) inductance ? ultra-fast switching operation ? zero reverse recovery current from diode ? zero turn-off tail current from mosfet ? normally-off, fail-safe device operation ? alsic baseplate and si3n4 amb substrate ? ease of paralleling ? high temperature packaging, t j(max) = 175 c ? as9100 / iso9001 certifed manufacturing system benefts ? enables compact, lightweight systems ? high effciency operation ? reduced thermal requirements applications ? high-effciency converters / inverters ? motor & traction drives ? smart-grid / grid-tied distributed generation package 65mm x 110mm x 10mm maximum ratings (t c = 25?c unless otherwise specifed) symbol parameter value unit test conditions notes v dsmax drain - source voltage 1.2 kv v gsmax gate - source voltage, maximum values -10/+25 v t j = -55 to 150 c -10/+23 t j = -55 to 175 c v gsop gate - source voltage, recommended operation values -5/+20 v t j = -55 to 150 c -5/+18 t j = -55 to 175 c i d continuous drain current 444 a t c = 25 ?c t j = 175 c fig. 17 256 t c = 125?c, t j = 175 c t jmax junction temperature 175 ?c t c ,t stg case and storage temperature range -55 to +175 ?c v isol case isolation voltage 1.2 kv ac, 50 hz , 1 min p d power dissipation 1500 w t c = 25 ?c, t j = 175 ?c (per switch) fig. 16 part number package marking CAS325M12HM2 half-bridge module CAS325M12HM2 v ds 1.2 kv e sw, total @ 600v, 300a 9.3 mj r ds(on) 3.6 m? subject to change without notice. www.cree.com
2 electrical characteristics (t c = 25?c unless otherwise specifed) symbol parameter min. typ. max. unit test conditions note v dss drain - source blocking voltage 1.2 kv v gs = -5 v, i d = 2 ma v gs(th) gate threshold voltage 2.0 2.6 4 v v ds =v gs , i d = 105 ma 2.0 v ds =v gs , i d = 105 ma, t j = 175 ?c i dss zero gate voltage drain current 720 2000 a v ds = 1.2 kv, v gs = -5 v i gss gate-source leakage current 3.5 na v gs = 20 v, v ds = 0 v r ds(on) on state resistance 3.6 4.3 m? v gs = 20 v, i ds = 400 a fig. 5 7.6 v gs = 18 v, i ds = 400 a , t j = 175 ?c c iss input capacitance 19.5 nf v gs = 0 v, v ds = 1000 v, f = 1 mhz, v ac = 25 mv fig. 11, 12 c oss output capacitance 1.54 c rss reverse transfer capacitance 0.10 e on turn-on switching energy 5.6 mj v dd = 600 v, v gs = -5v/+20v i d = 300 a, r g(ext) = 2? note: iec 60747-8-4 defnitions fig. 13 e off turn-off switching energy 3.7 q gs gate-source charge 322 nc v ds = 800 v, v gs = -5v/+20v, i d = 350 a, per iec 60747-8-4 q gd gate-drain charge 350 q g total gate charge 1127 dff free-wheeling sic schottky diode characteristics symbol parameter min. typ. max. unit test conditions note v sd diode forward voltage 1.7 2.0 v i f = 350 a, v gs = -5 v fig. 6 2.5 2.8 i f = 350 a, t j = 175 ?c, v gs = -5 v q c total capacitive charge 4.3 c includes schottky & body diodes note: the reverse recovery is purely capacitive thermal characteristics symbol parameter min. typ. max. unit test conditions note r thjcm thermal resistance juction-to-case for mosfet 0.085 0.100 0.115 ?c/w fig. 18,19 r thjcd thermal resistance juction-to-case for diode 0.094 0.110 0.127 additional module data symbol parameter min. typ. max. unit test condtion w weight 140 g m mounting torque 0.9 1.1 1.3 nm power terminals, m4 bolts 3 4.5 5 baseplate, m6 bolts l ce loop inductance 5 nh CAS325M12HM2, rev. a, 12-2016
3 typical performance figure 2. typical output characteristics t j = 175 ? c figure 1. typical output characteristics t j = 25 ? c figure 6. antiparallel diode characteristic, v gs = -5 v figure 4. typical output characteristics t j = 175 ? c figure 5. on-resistance vs. temperature for various gate-source voltage figure 3. typical output characteristics t j = 150 ? c CAS325M12HM2, rev. a, 12-2016
4 typical performance figure 8. 3 rd quadrant characteristic at 125 ? c figure 10. 3 rd quadrant characteristic at 175 ? c figure 9. 3 rd quadrant characteristic at 150 ? c figure 12. typical capacitances vs. drain-source voltage (0 - 1 kv) figure 7. 3 rd quadrant characteristic at 25 ? c figure 11. typical capacitances vs. drain-source voltage (0 - 200 v) CAS325M12HM2, rev. a, 12-2016
5 typical performance figure 14. inductive switching energy vs. drain current for v dd = 800v, r g = 2 ? figure 13. inductive switching energy vs. drain current for v dd = 600v, r g = 2 ? figure 18. mosfet junction to case thermal impedance figure 15. inductive switching energy vs. gate resistance, i ds = 300a figure 16. maximum power dissipation (mosfet) derating per switch position vs case temperature figure 17. continous drain current derating vs case temperature CAS325M12HM2, rev. a, 12-2016
6 typical performance figure 19. diode junction to case thermal impedance unspecified dimensions .xx = 0.3 mm CAS325M12HM2 package dimensions (mm) CAS325M12HM2, rev. a, 12-2016
7 7 CAS325M12HM2 rev. a, 12-2016 copyright ? 2014 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? the sic mosfet module switches at speeds beyond what is customarily associated with igbt-based moules. therefore, special precautions are required to realize the best performance. the interconnection between the gate driver and module housing needs to be as short as possible. this will afford the best switching time and avoid the potential for device oscillation. also, great care is required to insure minimum inductance between the module and dc link capacitors to avoid excessive vds overshoot. ? the module utilizes the esqt-105-02-g-d-xxx family of elevated socket connectors from samtec, available in varying height ac - cording to the customers preference ? companion parts: cgd15hb62lp + high performance three phase evaluation unit ? some values were obtained from the cpm2-1200-0025b and cpw5-1200-z050b device datasheet. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems. ? the product described is not eligible for distributor stock rotation or inventory price protection. important notes
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